| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high breakdown voltage and superior reverse recovery characteristics.SOLUTION: In a semiconductor device having an SOI substrate of a first conductivity type with a buried oxide layer, a semiconductor region of the first conductivity type formed on the SOI substrate, a semiconductor region of a second conductivity type arranged having its long side in parallel with a long side of the semiconductor region of the first conductivity type formed on the SOI substrate, and an element isolation region surrounding the semiconductor region of the first conductivity type and the semiconductor region of the second conductivity type, the element isolation region is formed in a projection shape such that the distance between one end of the long side of the semiconductor region of the first conductivity type and the element isolation region adjoining it is longer than the distance between one end of the long side of the semiconductor region of the second conductivity type and the element isolation region adjoining it. |
