发明名称 POLISHING LIQUID COMPOSITION FOR SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a polishing liquid composition for a semiconductor substrate which is good for polishing selectivity of an oxide film in polishing the semiconductor substrate and is well utilized for manufacturing the semiconductor substrate having excellent flatness.SOLUTION: A polishing liquid composition for semiconductor substrate contains polyuronic acid having a &bgr;1→4 bond, ceria particle and aqueous medium. Such polyuronic acid is favorable as the one having a structure that part or all of hydroxymethyl group of a sixth polysaccharide is replaced by a carboxy group and one or more groups chosen among salt of carboxy groups and such a polysaccharide is favorable as cellulose.
申请公布号 JP2014011388(A) 申请公布日期 2014.01.20
申请号 JP20120148599 申请日期 2012.07.02
申请人 KAO CORP 发明人 YODA KOJI;OSAKI KOJI;OKUTANI YURI
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
代理机构 代理人
主权项
地址