发明名称 |
POLISHING LIQUID COMPOSITION FOR SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid composition for a semiconductor substrate which is good for polishing selectivity of an oxide film in polishing the semiconductor substrate and is well utilized for manufacturing the semiconductor substrate having excellent flatness.SOLUTION: A polishing liquid composition for semiconductor substrate contains polyuronic acid having a &bgr;1→4 bond, ceria particle and aqueous medium. Such polyuronic acid is favorable as the one having a structure that part or all of hydroxymethyl group of a sixth polysaccharide is replaced by a carboxy group and one or more groups chosen among salt of carboxy groups and such a polysaccharide is favorable as cellulose. |
申请公布号 |
JP2014011388(A) |
申请公布日期 |
2014.01.20 |
申请号 |
JP20120148599 |
申请日期 |
2012.07.02 |
申请人 |
KAO CORP |
发明人 |
YODA KOJI;OSAKI KOJI;OKUTANI YURI |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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