| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor layer manufacturing method which can achieve high photoelectric conversion efficiency even when a layer having a large area is manufactured.SOLUTION: A semiconductor layer manufacturing method comprises: a process of preparing a base substrate A in which a film containing a metal element is arranged on a first principal surface of a substrate 1 having the first principal surface and a second principal surface on the opposite side to the first principal surface; a process of fixing the base substrate A to a third principal surface of a plate-like member 100 having the third principal surface having an outer shape larger than that of the base substrate A in such a way as to position the base substrate A on an inner side of an outer periphery of the third principal surface to form a laminate AA composed of the base substrate A and the plate-like member 100; a process of arranging the laminate AA in a furnace 101; and a process of making the film be a semiconductor layer including metal chalcogenide by heating the laminate while supplying chalcogen element to inside the furnace 101. |
