METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can obtain stable characteristics of a vertical transistor, and to provide the semiconductor device.SOLUTION: The method for manufacturing the semiconductor device comprises the steps of: forming a first insulation film on a side wall of a hole which penetrates a laminate having a selection gate and an insulation layer provided on the selection gate; and forming a channel body on the side wall of the first insulation film. The method for manufacturing the semiconductor device also comprises a step of forming a second insulation film which is provided at the side wall of the channel body with a space left in the hole above the selection gate, while blocking the hole in the vicinity of the end at the insulation layer side of the selection gate, and in which the film thickness at the side wall part surrounding the space is thinner than that at the bottom part blocking the hole.