| 摘要 |
PROBLEM TO BE SOLVED: To improve the controllability of a contact hole formation by self-alignment.SOLUTION: A semiconductor substrate 1 is provided with a memory cell portion RA and a peripheral circuit portion RB. The peripheries of gate electrodes 41A and 41B are surrounded by an organic insulating layer 19, and a stopper film 9 and a hard-mask layer 10 are provided on the organic insulating layer 19. A contact hole K7A is formed between gate electrodes 41A by self-alignment, a contact hole K7B is formed on a gate electrode 41B, and a contact hole K7C is formed on an impurity diffusion layer 2B. Contact electrodes 11A, 11B, and 11C are integrally buried in the contact holes K7A, K7B, and K7C, respectively. |
