| 摘要 |
PROBLEM TO BE SOLVED: To contribute to the acceleration of a reading speed by suppressing data inversion (data destruction) caused by an SNM failure during reading an SRAM cell.SOLUTION: A capacitor CG1 connected to a storage node NA of an SRAM cell 160 and a word line WL to have an electrostatic capacitance between the storage node NA and the word line WL is provided. The capacitor CG1 relatively has a first electrostatic capacitance CL in the case that the word line WL is in a non-selection state (normally low level) and the storage node NA holds a high level, and has a second electrostatic capacitance CS smaller than the first electrostatic capacitance CL in the case that the word line WL is in a non-selection state (normally low level) and the storage node NA holds a low level. |
