| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an insulation film of high flatness, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a wiring layer formed above the semiconductor substrate; a first interlayer insulation film formed above the wiring layer; and a second interlayer insulation film formed on the first interlayer insulation film. A carbon content rate of the first interlayer insulation film is higher than a carbon content rate of the second interlayer insulation film. |
