| 摘要 |
The present invention provides a sputtering target which can form an oxide thin film having low electric resistance and excellent etching property even in high crystallization temperatures and an amorphous state. In order that the atom ratio of indium, zinc, and tin becomes 60-80 at.% of the indium, 10-25 at.% of the zinc, and 1-20 at.% of the tin; wherein the atom content of the zinc becomes higher than the tin thereof, the sputtering target contains metal oxide compositions having indium oxide, zinc oxide, and tin oxide. |
