| 摘要 |
<p>The present technique is to provide a semiconductor apparatus using a buried type word line and a method for manufacturing the same. According to the present technique, the semiconductor apparatus includes a device isolation layer defining an active region in a semiconductor substrate, a first gate buried and interesting with the device isolation layer and the active regions in a first direction, and a second gate extended in a second direction and connected to a first gate buried in the device isolation layer.</p> |
