| 摘要 |
Disclosed is a technique which improves characteristics of a semiconductor device. After linear spare storage electrodes extended in the same direction as the major axis direction of an active region are formed, the spare storage electrodes are divided into cell units, and each storage electrode is formed, thereby minimizing the misalignment of an active region, storage electrode contact, and the storage electrode. A method for manufacturing a semiconductor device according to the present invention comprises the following steps of: forming buried gates in a semiconductor substrate including active regions and device isolation layers; forming bit lines which are connected to the active regions on the top of the semiconductor substrate including the buried gates; forming storage electrode contacts which are connected to the active regions at both sides of the bit lines; forming spare storage electrode contacts having a liner shape on the storage electrode contacts and the top of the bit lines; and forming storage electrodes which are connected to the storage electrode contacts by dividing the linear spare storage electrode contacts. |
