MANUFACTURING METHOD OF CIGS SOLAR CELL

摘要

The present invention is to provide a method for manufacturing a CIGS solar cell having a V-type distribution for excellent light conversion efficiency in a CIGS light absorption layer by controlling Ga distribution. According to one aspect of the present invention, the method for manufacturing a CIGS solar cell includes a selenization step for performing a thermal process on a CIGS precursor formed in a CIGS precursor layer on one surface of a substrate. The CIGS precursor layer includes a first metal layer including Cu, Ga, and In formed on one surface of the surface; a first Se layer formed in the upper part of the first metal layer, and a second metal layer including Cu, Ga, and In formed in the upper part of the first Se layer.