发明名称 ETCHANT FOR METAL LAYER
摘要 An etchant for a metal film, which can provide very good etching properties during etching of the metal film, can maintain etching uniformity even in case of a large size of the substrate and can prevent spots from being generated on the substrate when manufacturing an array substrate for liquid crystal display panels, and can be used in forming various types of wiring such as a gate electrode, a source electrode, a drain electrode and a pixel electrode, is provided. An etchant for a metal film comprises: 8 to 31 wt.% of hydrogen peroxide based on the total composition weight; 0.1 to 10 wt.% of a halogen-based additive based on the total composition weight; and 59 to 91.9 wt.% of water based on the total composition weight. A method for manufacturing an array substrate for liquid crystal display panels comprises the steps of: (a) forming a metal layer on a substrate(10); (b) etching the metal layer to form a gate electrode(20a); (c) forming a gate insulation layer(30) on the gate electrode; (d) forming a semiconductor layer on the gate insulation layer; (e) forming a source electrode(50) and a drain electrode(51) on the semiconductor layer; and (f) forming a pixel electrode(70) on the source electrode and the drain electrode, wherein an etching process is performed in any one step of the step(b), the step(e) and the step(f) using an etchant for a metal film comprising: 8 to 31 wt.% of hydrogen peroxide based on the total composition weight; 0.1 to 10 wt.% of a halogen-based additive based on the total composition weight; and 59 to 91.9 wt.% of water based on the total composition weight.
申请公布号 KR101353123(B1) 申请公布日期 2014.01.17
申请号 KR20060113356 申请日期 2006.11.16
申请人 发明人
分类号 C23F1/16 主分类号 C23F1/16
代理机构 代理人
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