| 摘要 |
<p>The present invention relates to a semiconductor device including a substrate including a main surface; a first conductive area; a second conductive area; a first pillar vertically extended on the main surface of the substrate and defining a channel area included between the first conductive area and the second conductive area; a first gate included on the upper part of the channel area of the first pillar; an embedded word line extended from the lower part of the first pillar in a first direction and supplying a first control signal to the first gate; and a first interposer connecting the first gate and the embedded word line in order for the first control signal to be applied to the first gate through the embedded word line.</p> |
