MULTIPLE ELECTRIC CHARGE PARTICLE BEAM LITHOGRAPHY METHOD AND MULTIPLE ELECTRIC CHARGE PARTICLE BEAM LITHOGRAPHY DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress variations in dimensions due to deviation in the irradiation position of a multibeam due to a factor such as distortion in an optical system.SOLUTION: A multiple electric charge particle beam lithography method of an aspect according to the invention is characterized by comprising the steps of: calculating a shot position including a distortion portion in the case of radiating each beam on a sample on the basis of a control grid interval of which the lengthwise and crosswise are preset using a multibeam; calculating a condition position by a preset condition in each first region of a plurality of first regions surrounded by shot positions of their nearest 2×2 beam groups; calculating the area density of a figure pattern to be drawn and overlapped with second regions per second region regarding a plurality of second regions surrounded by a plurality of their nearest condition position groups; and calculating irradiation time of a beam of which the shot position is in each second region according to the area density of each second region.