发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which has light extraction efficiency higher than that in the past.SOLUTION: A semiconductor light-emitting element having high light extraction efficiency comprises: a light reflection layer which is formed on a support substrate and includes a bank part having a predetermined plane pattern; a translucent first electrode formed on the light reflection layer in such a way as to surround the bank part of the light reflection layer; a semiconductor laminate which is formed on the first electrode and in which a first semiconductor layer having a first conductivity type, a luminescent active layer and a second semiconductor layer having a second conductivity type are sequentially laminated; and a second electrode selectively formed on the second semiconductor layer. The bank part of the light reflection layer includes a part overlapping the second electrode in planar view, a part projecting from the first electrode in cross-sectional view and a side wall surface which reflects light emitted from the active layer to the second semiconductor layer in a region where the second electrode is not formed.
申请公布号 JP2014007252(A) 申请公布日期 2014.01.16
申请号 JP20120141292 申请日期 2012.06.22
申请人 STANLEY ELECTRIC CO LTD 发明人 HIGASHINO JIRO
分类号 H01L33/10 主分类号 H01L33/10
代理机构 代理人
主权项
地址