| 摘要 |
There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer (16) and an n-type amorphous silicon layer (14) are formed over a light-receiving surface of an n-type monocrystalline silicon substrate (18); a second step in which an i-type amorphous silicon layer (22a) and an n-type amorphous silicon layer (23a) are formed over a back surface of the n-type monocrystalline silicon substrate (18); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer (14) and the n-type amorphous silicon layer (23a). |
