发明名称 |
Metallic Contact for Optoelectronic Semiconductor Device |
摘要 |
A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact. |
申请公布号 |
US2014016660(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201313940515 |
申请日期 |
2013.07.12 |
申请人 |
SENSOR ELECTRONIC TECHNOLOGY, INC. |
发明人 |
LUNEV ALEXANDER;SHATALOV MAXIM S.;DOBRINSKY ALEXANDER;SHUR MICHAEL;GASKA REMIGIJUS |
分类号 |
H01L33/36;H01L33/60;H01S5/32 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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