发明名称 Current Sense Transistor with Embedding of Sense Transistor Cells
摘要 A semiconductor device a field of transistor cells integrated in a semiconductor body. A number of the transistor cells forming a power transistor and at least one of the transistor cells forming a sense transistor. A first source electrode is arranged on the semiconductor body electrically connected to the transistor cell(s) of the sense transistor but electrically isolated from the transistor cells of the power transistor. A second source electrode is arranged on the semiconductor body and covers the transistor cells of both the power transistor and the sense transistor, and at least partially covering the first source electrode in such a manner that the second source electrode is electrically connected only to the transistor cells of the power transistor but electrically isolated from the transistor cells of the sense transistor.
申请公布号 US2014015046(A1) 申请公布日期 2014.01.16
申请号 US201213549463 申请日期 2012.07.14
申请人 THIELE STEFFEN;MEISER ANDREAS;ZUNDEL MARKUS;INFINEON TECHNOLOGIES AG 发明人 THIELE STEFFEN;MEISER ANDREAS;ZUNDEL MARKUS
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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