发明名称 |
Current Sense Transistor with Embedding of Sense Transistor Cells |
摘要 |
A semiconductor device a field of transistor cells integrated in a semiconductor body. A number of the transistor cells forming a power transistor and at least one of the transistor cells forming a sense transistor. A first source electrode is arranged on the semiconductor body electrically connected to the transistor cell(s) of the sense transistor but electrically isolated from the transistor cells of the power transistor. A second source electrode is arranged on the semiconductor body and covers the transistor cells of both the power transistor and the sense transistor, and at least partially covering the first source electrode in such a manner that the second source electrode is electrically connected only to the transistor cells of the power transistor but electrically isolated from the transistor cells of the sense transistor. |
申请公布号 |
US2014015046(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201213549463 |
申请日期 |
2012.07.14 |
申请人 |
THIELE STEFFEN;MEISER ANDREAS;ZUNDEL MARKUS;INFINEON TECHNOLOGIES AG |
发明人 |
THIELE STEFFEN;MEISER ANDREAS;ZUNDEL MARKUS |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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