发明名称 |
Apparatus and Method for Memory Device |
摘要 |
An apparatus comprises a gate stack formed over a substrate, wherein the gate stack comprises a first gate structure, wherein a first dielectric layer is formed between the first gate structure and the substrate and a second gate structure stacked on the first gate structure, wherein a second dielectric layer is formed between the first gate structure and the second gate structure. The apparatus further comprises a first drain/source region and a first recess formed between a top surface of the first drain/source region and the second dielectric layer. |
申请公布号 |
US2014015031(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201213547741 |
申请日期 |
2012.07.12 |
申请人 |
HSIEH PING-PANG;LEE CHIH-MING;CHEN YU-JEN;JANGJIAN SHIU-KO;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH PING-PANG;LEE CHIH-MING;CHEN YU-JEN;JANGJIAN SHIU-KO |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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