发明名称 |
STRAIN-ENGINEERED BANDGAPS |
摘要 |
An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, the optoelectronic device includes a first optoelectronic material that is inhomogeneously strained. A first charge carrier collector and a second charge carrier collector are each in electrical communication with the first optoelectronic material and are adapted to collect charge carriers from the first optoelectronic material. In another embodiment, a method of photocatalyzing a reaction includes using a strained optoelectronic material. |
申请公布号 |
US2014017839(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201313941215 |
申请日期 |
2013.07.12 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;PEKING UNIVERSITY |
发明人 |
LI JU;QIAN XIAOFENG;FENG JI |
分类号 |
H01L31/0352;H01L31/18;H01L33/00;H01L33/24;H05B33/08 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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