| 摘要 |
There is provided a silicon-containing composition for forming a pattern reversal film that can be reworked by an organic solvent that is normally used for the removal of resist patterns. A composition for forming a pattern reversal film, characterized by comprising: polysiloxane; an additive; and an organic solvent, wherein the polysiloxane has a structural unit of Formula (1) and a structural unit of Formula (2): (where R1 is a C1-8 alkyl group), and (where R2 is an acryloyloxy group or a methacryloyloxy group; and n is an integer of 2 to 4), and the additive is an organic acid having at least two of a carboxy group and/or a hydroxy group; and a pattern reversal film and a method for forming a reversal pattern by use of the composition. |
