| 摘要 |
Provided is a mask blank suitable for manufacturing a phase-shift mask having a substrate-engraved pattern and a thin-film pattern comprising a material that can be dry-etched by a fluorine-containing gas. A mask blank (100) is used to manufacture a phase-shift mask having a thin-film pattern and a substrate-engraved pattern. The mask blank (100) has a structure in which an etching stopper film (2), a pattern formation thin-film (3), and an etching mask film (4) are layered in this order on a transparent substrate (1). Here, the etching stopper film (2) comprises a material containing chromium and oxygen, in which the oxygen content is more than 50 at%. The pattern formation thin-film (3) comprises a material that can be dry-etched by a fluorine-containing gas. The etching mask film (4) comprises a material containing chromium, in which the chromium content is at least 45 at% and the oxygen content is no more than 30 at%. |
