NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF AND DATA STORAGE DEVICE INCLUDING THE SAME

摘要

The present technology relates to a semiconductor memory device and, more specifically, to a nonvolatile memory device, a driving method thereof, and a data storage device including the same. The nonvolatile memory device comprises memory cells arranged in an area in which a word line crosses with a bit line; a power generator increasing the program power applied to the word line according to the repetition of a program loop; a current sensing inspection unit for comparing a first reference value and a second reference value with the number of failed memory cells among the memory cells; and a control logic for controlling the power generator to change the increasing rate according to the comparison result of the current sensing inspection unit.