| 发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bulk, a gate, a source, a drain and a bulk contact region. The gate is on the bulk. The source and the drain are in the bulk on opposing sides of the gate respectively. The bulk contact region is only in a region of the bulk adjacent to the source. The bulk contact region is electrically connected to the bulk. |
| 申请公布号 |
US2014015016(A1) |
申请公布日期 |
2014.01.16 |
| 申请号 |
US201213547549 |
申请日期 |
2012.07.12 |
| 申请人 |
CHUNG MIAO-CHUN;CHENG AN-LI;HUANG YIN-FU;LIEN SHIH-CHIN;WU SHYI-YUAN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHUNG MIAO-CHUN;CHENG AN-LI;HUANG YIN-FU;LIEN SHIH-CHIN;WU SHYI-YUAN |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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