MAGNETIC RANDOM ACCESS MEMORY

摘要

A magnetic memory device such as a magnetic random access memory (MRAM), and a memory module and a memory system on which the magnetic memory device is mounted are disclosed. The MRAM includes magnetic memory cells each of which varies between at least two states according to a magnetization direction and an interface unit that provides various interface functions. The memory module includes a module board and at least one MRAM chip mounted on the module board, and further includes a buffer chip that manages an operation of the at least one MRAM chip. The memory system includes the MRAM and a memory controller that communicates with the MRAM, and may communicate an electric-to-optical conversion signal or an optical-to-electric conversion signal by using an optical link that is connected between the MRAM and the memory controller.