Infrared imaging device integrating an IR up-conversion device with a CMOS image sensor
摘要
<p>Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.</p>
申请公布号
AU2012268322(A1)
申请公布日期
2014.01.16
申请号
AU20120268322
申请日期
2012.06.06
申请人
NANOHOLDINGS, LLC;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.