发明名称 |
OXIDE SINTERED BODY AND PRODUCTION METHOD THEREFOR, TARGET, AND TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE SUBSTRATE OBTAINED BY USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a tablet for ion plating which can realize nodule-less and high-rate film formation and, an optimal oxide sintered body for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low resistance obtained by using the same.SOLUTION: In an oxide sintered body containing indium and gallium as oxides and the like provided in the present invention: an InOphase with a bixbyite-type structure is a major crystal phase whereas a GaInOphase with a &bgr;-GaO-type structure, or a GaInOphase and a (Ga,In)Ophase, is finely dispersed therein as crystal grains having an average particle diameter of 5 μm or less; the gallium content as the atomic ratio Ga/(In+Ga) is 10 atom% or greater and below 35 atom%; and the density is 6.3 g/cmor greater. |
申请公布号 |
JP2014005198(A) |
申请公布日期 |
2014.01.16 |
申请号 |
JP20130168790 |
申请日期 |
2013.08.15 |
申请人 |
SUMITOMO METAL MINING CO LTD |
发明人 |
NAKAYAMA NORIYUKI;ABE TAKAYUKI |
分类号 |
C04B35/00;C23C14/08;C23C14/34;H01B5/14 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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