发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a vertical cavity surface-emitting laser (VCSEL) capable of preventing oscillation in the horizontal direction.SOLUTION: A semiconductor light-emitting element 1 includes a substrate 11, an active layer 21, a first mirror portion 24, a second mirror portion 25, insulating regions 25a, and light-emitting window portions 51a and 51b. Threshold-gain increasing portions for increasing a first threshold gain to oscillate in a direction orthogonal to the semiconductor stacking direction are formed in regions that are not overlapped with light-emitting window portions 51a and 51b when viewed from the semiconductor stacking direction or side portions of the element. The threshold-gain increasing portions are formed to change the magnitude relation between a second threshold gain and a first threshold gain that are threshold gains to oscillate in the semiconductor stacking direction, before and after the formation of the threshold-gain increasing portions.
申请公布号 JP2014007335(A) 申请公布日期 2014.01.16
申请号 JP20120143016 申请日期 2012.06.26
申请人 HAMAMATSU PHOTONICS KK 发明人 TORII KOSUKE;NAITO HIDEYUKI;MIYAMOTO MASAHIRO;HIGUCHI AKIRA;AOKI YUTA;MORITA TAKENORI;MIYAJIMA HIROBUMI;MAEDA JUNYA;YOSHIDA HARUMASA
分类号 H01S5/183 主分类号 H01S5/183
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