| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor using an oxide semiconductor film having stable electric characteristics; and provide the transistor using the oxide semiconductor film having high on-state characteristics.SOLUTION: In a semiconductor device manufacturing method, a low-resistance oxide semiconductor film is formed and a channel region of the oxide semiconductor film is made to have high-resistance. Practically, the low-resistance oxide semiconductor film is formed by performing on the oxide semiconductor film, processing of making the oxide semiconductor film have low resistance. The processing of making the oxide semiconductor film have low resistance may be performed, for example, by a laser beam treatment or a heating treatment at not less than 450°C and not more than 740°C. Further, processing of making the channel region of the low-resistance oxide semiconductor film have high resistance may be performed, for example, plasma oxidation or oxygen ion implantation. |
