SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce on-resistance by accumulating hole between a collector layer and a base layer; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a first conductivity type collector layer; a second conductivity type first semiconductor layer arranged on the collector layer; a second conductivity type interposed layer which has an impurity concentration higher than that of the first semiconductor layer and arranged on and in contact with the first semiconductor layer; a second conductivity type second semiconductor layer which is arranged opposite to the first semiconductor layer across the interposed layer and has an impurity concentration equal to or less than that of the first semiconductor layer; a first conductivity type base layer arranged on and in contact with the second semiconductor layer; and a second conductivity type emitter region embedded in a part of a top face of the base layer. The interposed layer and the base layer are arranged away from each other.