SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

An electrode layer (1) is formed on each of a plurality of semiconductor elements formed on a silicon carbide substrate; the semiconductor elements are separated into individual pieces by cutting within exposed-surface regions of the silicon carbide substrate that partition the electrode layers (1); and the exposed surface in the outer peripheral end sections of the electrode-layer-formed surface of each individually separated semiconductor element is covered with a stress relaxation resin (7). Thus, it is possible to obtain a semiconductor device (PM) that has high adhesive strength with respect to a sealing resin (R) even in semiconductor elements using a compound semiconductor substrate such as silicon carbide, and that is less likely to cause cracking and peeling of the sealing resin (R) due to thermal stress at the time of operation.