发明名称 SOLID-STATE IMAGING DEVICE
摘要 A semiconductor element layer has a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which a peripheral circuit for processing the device is provided, a power supply line to supply an electric power to the peripheral circuit, provided at a first side of the semiconductor element layer in the peripheral circuit region, a first wiring layer to supply the electric power to the power supply line, provided at a second side of the semiconductor element layer in the peripheral circuit region, and a plurality of first through-electrodes, provided in the peripheral circuit region and passing through the semiconductor element layer between the first side and the second side. At least a part of the first through-electrodes electrically connect between the power supply line and the first wiring layer.
申请公布号 US2014015600(A1) 申请公布日期 2014.01.16
申请号 US201313773318 申请日期 2013.02.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO EIJI
分类号 H01L31/0224;G05F3/02 主分类号 H01L31/0224
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