LIFT-OFF METHOD FOR SILICONE SUBSTRATE

摘要

The present invention relates to a surface peeling method of a silicon substrate capable of maintaining the quality of a silicon thin film by being performed at low temperature and low cost. It includes a step of preparing a crystalline silicon substrate, a step of composing a plating for electrodeposition, a step of forming a stress layer on the crystalline silicon substrate with an electrodeposition process by using the plating, and a step of peeling a surface of the substrate by electrodeposition stress remained on the stress layer. The surface peeling method includes a step of preparing a crystalline silicon substrate, a step of forming a buffer layer on the substrate, a step of composing a plating for electrodeposition, a step of forming a stress layer on the crystalline silicon substrate with an electrodeposition process by using the plating, and a step of peeling a surface of the substrate by electrodeposition stress remained on the stress layer. Stress remained on the buffer layer is smaller than the stress remained on the stress layer. With the invention, a crystalline silicon thin film can be manufactured at a low cost by peeling the crystalline silicon substrate by using the electrodeposition and the quality of the thin film can be prevented from degrading at high temperature.