| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method for manufacturing nanodevices with cost efficiency.SOLUTION: A system and method for rapid atomic layer etching (ALET) includes a pulsed plasma source and a reaction chamber. The plasma source includes a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, and a gas inlet. The reaction chamber includes a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, and then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate. |
