| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector capable of detecting light having a wavelength longer than the absorption edge wavelength of a semiconductor layer.SOLUTION: A photodetector 1A includes a laminated structure 3 which has a first metal layer 4, a semiconductor layer 5 laminated on the first metal layer 4, and a second metal layer 6 laminated on the semiconductor layer 5. In the laminated structure 3, surface plasmons are excited by incident light having a wavelength longer than the absorption edge wavelength of the semiconductor layer 5, and phonons are excited by an electric field formed by resonance of the surface plasmons, whereby electrons in the semiconductor layer 5 transit. |
