ZINC OXIDE-BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND THIN FILM TRANSISTOR HAVING SHIELD FILM EVAPORATED THROUGH THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve DC sputtering, and to improve the contact properties and etching characteristics of a shield film evaporated through the DC sputtering.SOLUTION: A zinc oxide-based sputtering target includes: a sintered body made of zinc oxide doped with gallium oxide by 5-40 wt.%; and a backing plate, joined to a rear surface of the sintered body and supporting the sintered body. A method of manufacturing the zinc oxide-based sputtering target includes: a slurry manufacturing step of manufacturing slurry by adding the gallium oxide to the zinc oxide at a weight ratio of 5-40 wt.%; a drying step of drying the slurry into granular powder; a molding step of molding the granular powder into a molding; and a sintering step of sintering the molding into a sintered body.