| 摘要 |
An LDMOSFET includes a semiconductor substrate having a first semiconductor region formed of a feeding region of a first conduction type at a position where a field oxide film is not present on a surface layer of a semiconductor region in which the field oxide film is selectively formed, and a second semiconductor region formed of a well region of a second conduction type which is an opposite conduction type, and feeding regions of the first and second conduction types formed on an upper layer of the well region, and a gate electrode that faces the well region through a gate oxide film. The feeding region is formed at a distance from the field oxide film in an end portion in a longitudinal direction, and desirably the feeding region is intermittently formed at given intervals in the longitudinal direction, and the feeding region is applied to the first semiconductor region. |
