| 摘要 |
A trench gate MOSFET is provided. An epitaxial layer is disposed on a substrate. A body layer is disposed in the epitaxial layer. The epitaxial layer has a first trench therein, the body layer has a second trench therein, and the first trench is disposed below the second trench. A first conductive layer is disposed in the first trench. A first insulating layer is disposed between the first conductive layer and the epitaxial layer. A second conductive layer is disposed on a sidewall of the second trench. A second insulating layer is disposed between the second conductive layer and the body layer, and between the second conductive layer and the first conductive layer. A dielectric layer is disposed on the epitaxial layer and fills up the second trench. Two doped regions are disposed in the body layer respectively beside the second trench. |
