The invention relates to a method for producing small openings in thin films, especially for producing contact windows on a mesa structure of a semiconductor component. In this case, only the mesa structure is coated very thinly with a radiation-sensitive layer which can then be selectively removed.
申请公布号
DE3828378(A1)
申请公布日期
1990.03.15
申请号
DE19883828378
申请日期
1988.08.20
申请人
LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT, DE