发明名称 |
REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES |
摘要 |
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer. |
申请公布号 |
WO2014009856(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
WO2013IB55446 |
申请日期 |
2013.07.03 |
申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
GRILLOT, PATRICK NOLAN;WILDESON, ISAAC HARSHMAN;NSHANIAN, TIGRAN;DEB, PARIJAT PRAMIL |
分类号 |
H01L33/00;H01L33/02;H01L33/12;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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