PATTERN FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM

摘要

Provided is a pattern forming method which is characterized in including: an etching step wherein a silicon-containing film on a substrate is etched through a mask using plasma generated from an etching gas that contains a carbon fluoride (CF) gas, and a predetermined pattern is formed in the silicon-containing film; and a film-forming step wherein a layer adsorbed to the surface of the predetermined pattern using a silicon compound gas is oxidized or nitrided with plasma generated from an oxidizing gas or a nitriding gas, and a silicon oxide film or a silicon nitride film is formed on the surface of the predetermined pattern.