The present invention relates to a semiconductor device. According to the embodiment of the present invention, the semiconductor device field regions formed in a substrate; N-type impurity regions formed between the field regions. The substrate includes an epitaxial growth layer. The surface of the epitaxial growth layer has a {100} plane.
申请公布号
KR20140006370(A)
申请公布日期
2014.01.16
申请号
KR20120073038
申请日期
2012.07.04
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHOI, JOON YOUNG;LEE, KYUNG HO;CHOI, SANG JUN;KOO, TAE HYOUNG;CHOI, SAM JONG