| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer cleaning method which allows the suppression of floating of a silicon wafer in a cleaning step, and a method for manufacturing a photoelectric conversion device by use of the cleaning method.SOLUTION: The silicon wafer cleaning method comprises the step of cleaning a surface of a silicon wafer having a thickness within a range of 50-300 μm by use of a mixed aqueous solution of hydrogen chloride and hydrogen peroxide. In the mixed aqueous solution, the proportion of the hydrogen chloride to the hydrogen peroxide (weight ratio) is within a range of 1:0.03 to 1:0.15, and the total of the densities of the hydrogen chloride and the hydrogen peroxide falls within a range of 4-7 wt.%. |
