| 摘要 |
Disclosed is a method for manufacturing a shallow groove partition, comprising: forming a hard mask layer on a substrate; photolithographing/etching the hard mask layer and the substrate, forming multiple first grooves and multiple second grooves, where the first grooves run along a first direction, where the second grooves run along a second direction that is perpendicular to the first direction, and where the sizes of the second grooves are greater than the sizes of the first grooves; depositing an insulation material in the first and second grooves; and flattening the insulation material and the hard mask layer until the substrate is exposed, thus forming the shallow groove partition. According to the method of the present invention for manufacturing the shallow groove partition, shallow groove partitions that are deeper and wider are etched and filled in the groove width direction, while shallow groove partitions that are shallower and narrower are etched and filled in the lengthwise direction of the grooves, while stresses are exerted onto an NMOS and a PMOS to increase carrier mobility of the grooves, thus increasing the overall driving capability of the component. |
