发明名称 |
ANALYSIS OF PATTERN FEATURES |
摘要 |
The embodiments disclose a method for an electron curing reverse-tone process, including depositing an etch-resistant layer onto a patterned imprinted resist layer fabricated onto a hard mask layer deposited onto a substrate, curing the etch-resistant layer using an electron beam dose during etching processes of imprinted pattern features into the hard mask and into the substrate and using analytical processes to quantify reduced pattern feature placement drift errors and to quantify increased pattern feature size uniformity of imprinted pattern features etched. |
申请公布号 |
US2014014621(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201313798130 |
申请日期 |
2013.03.13 |
申请人 |
YU ZHAONING;KURATAKA NOBUO;GAUZNER GENNADY |
发明人 |
YU ZHAONING;KURATAKA NOBUO;GAUZNER GENNADY |
分类号 |
B05C21/00 |
主分类号 |
B05C21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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