发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure. |
申请公布号 |
US2014014142(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201314024676 |
申请日期 |
2013.09.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIZAWA TAKESHI;YAMADA NOBUHIDE;OGAWA YOSHIHIRO;KIYOTOSHI MASAHIRO |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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