POLYCRYSTALLINE SILICON E-FUSE AND RESISTOR FABRICATION IN A METAL REPLACEMENT GATE PROCESS

摘要

A method of fabricating an integrated circuit is disclosed. The method comprises providing a substrate (100) having an isolation region (102) and etching a trench in the isolation region. A first conductive layer (114) is formed within the trench. A first transistor having a first conductivity type (n-channel) is formed at a face of the substrate. The first transistor has a gate formed of the first conductive layer. A second transistor having a second conductivity type (p-channel) is formed at the face of the substrate. The second transistor has a gate formed of the first conductive layer. The method further comprises replacing the first conductive layer of the first transistor with a first metal gate (132) and replacing the first conductive layer of the second transistor with a second metal gate (134).