发明名称 METHOD FOR ETHCHING MICRO-ELECTRICAL FILMS USING A LASER BEAM
摘要 <p>A method for etching with a laser beam having a predetermined wavelength an area of a layer of a first material, said area being deposited at the surface of at least two second materials, includes: depositing a layer of a third material on the layer of the first material, the first and the third materials having a chemical affinity on application of the laser beam greater than the chemical affinity during said application between the first material and each of said at least two second materials; and applying the laser beam to an area of a free surface of the layer of third material vertically above the area of the layer of first material with a fluence of said laser beam causing the separation of said area.</p>
申请公布号 KR20140006812(A) 申请公布日期 2014.01.16
申请号 KR20137016493 申请日期 2011.12.08
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 SEILER ANNE LAURE;BENWADIH MOHAMMED
分类号 H01L51/50 主分类号 H01L51/50
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