发明名称 |
Diffusion Barrier Layer for Group III Nitride on Silicon Substrate |
摘要 |
The present disclosure is directed to an integrated circuit and its formation. In some embodiments, the integrated circuit includes a diffusion barrier layer. The diffusion barrier layer can be arranged to prevent diffusion of the Si and O2 from a Si substrate into a Group III nitride layer. The diffusion barrier layer can comprise Al2O3. In some embodiments, the integrated circuit further comprises a lattice-matching structure disposed between the silicon substrate and a Group III nitride layer. |
申请公布号 |
US2014014967(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201213549610 |
申请日期 |
2012.07.16 |
申请人 |
CHEN CHI-MING;CHIU HAN-CHIN;YU CHUNG-YI;TSAI CHIA-SHIUNG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHI-MING;CHIU HAN-CHIN;YU CHUNG-YI;TSAI CHIA-SHIUNG |
分类号 |
H01L29/267;H01L21/20 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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