发明名称 |
WIDE BANDWIDTH RADIO FREQUENCY AMPLIER HAVING DUAL GATE TRANSISTORS |
摘要 |
A wide bandwidth radio frequency amplifier is disclosed. The wide bandwidth radio frequency amplifier has a first signal path having a first input and a first output along with a first dual gate field effect transistor having a first-first gate coupled to the first input and a first drain coupled to the first output. The wide bandwidth radio frequency amplifier also includes a second signal path having a second input and a second output and a second dual gate field effect transistor having a second-first gate coupled to the second input and a second drain coupled to the second output. |
申请公布号 |
US2014015609(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201313942998 |
申请日期 |
2013.07.16 |
申请人 |
RF MICRO DEVICES, INC. |
发明人 |
VETURY RAMAKRISHNA;SHEALY JEFFREY BLANTON |
分类号 |
H03F3/193 |
主分类号 |
H03F3/193 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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