发明名称 WIDE BANDWIDTH RADIO FREQUENCY AMPLIER HAVING DUAL GATE TRANSISTORS
摘要 A wide bandwidth radio frequency amplifier is disclosed. The wide bandwidth radio frequency amplifier has a first signal path having a first input and a first output along with a first dual gate field effect transistor having a first-first gate coupled to the first input and a first drain coupled to the first output. The wide bandwidth radio frequency amplifier also includes a second signal path having a second input and a second output and a second dual gate field effect transistor having a second-first gate coupled to the second input and a second drain coupled to the second output.
申请公布号 US2014015609(A1) 申请公布日期 2014.01.16
申请号 US201313942998 申请日期 2013.07.16
申请人 RF MICRO DEVICES, INC. 发明人 VETURY RAMAKRISHNA;SHEALY JEFFREY BLANTON
分类号 H03F3/193 主分类号 H03F3/193
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